TK100F04K3 2013-11-01 1 toshiba field effect transistor s ilicon n channel mos type (u-mosiv) TK100F04K3 swiching regulator, dc-dc converter applications motor drive applications ? low drain-source on resistance: r ds (on) = 2.5 m (typ.) ? high forward transfer admittance: |y fs | = 174 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 40 v) ? enhancement-model: v th = 3.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 40 v drain-gate voltage (r gs = 20 k ) v dgr 40 v gate-source voltage v gss 20 v dc (note 1) i d 100 drain current pulse (note 1) i dp 300 a drain power dissipation (tc = 25c) p d 180 w single pulse avalanche energy (note 2) e as 125 mj avalanche current i ar 100 a repetitive avalanche energy (note 3) e ar 18 mj channel temperature (note 4) t ch 175 c storage temperature range (note 4) t stg ? 55 to 175 c thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 0.83 c/w note 1: please use devices on condition that the channel temperature is below 175c. note 2: v dd = 25 v, t ch = 25c, l = 13 h, r g = 25 , i ar = 100 a note 3: repetitive rating; pulse width li mited by maximum channel temperature. note 4: 175c refers to aec-q101. note 5: using continuously under heavy loads (e.g. t he application of high temperat ure/current/voltage and the significant change in temperature, etc.) may cause this product to decr ease in the reliability significantly even if the operating conditions (i.e . operating temperature/current/volta ge, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic sens itive device. please handle with caution unit: mm 2.54 0.25 1. gate 2. drain heat sink 3. sourse 0.4 0.1 0.4 0.1 1.6 3.0 0.2 10.0 0.3 9.5 0.2 10.0 0.3 2.35 0.1 1.4 0.1 0.76 0.1 1.1 3.5 0.2 0.1 0.1 2.76 6.8 1.0 0.3 2.34 0.25 8.0 1 2 3 jedec ? jeita ? toshiba 2-10w1a weight: 1.07 g (typ.) 1 3 2 start of commercial production 2008-03
TK100F04K3 2013-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = 40 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 40 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 20 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 3.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 50 a ? 2.5 3.0 m forward transfer admittance ? y fs ? v ds = 10 v, i d = 50 a 87 174 ? s input capacitance c iss ? 4500 ? reverse transfer capacitance c rss ? 900 ? output capacitance c oss v ds = 10v, v gs = 0 v, f = 1 mhz ? 1100 ? pf rise time t r ? 21 ? turn-on time t on ? 37 ? fall time t f ? 31 ? switching time turn-off time t off ? 75 ? ns total gate charge (gate-source plus gate-drain) q g ? 102 ? gate-source charge q gs ? 56 ? gate-drain (?miller?) charge q gd v dd 32 v, v gs = 10 v, i d = 100 a ? 46 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 100 a pulse drain reverse current (note 1) i drp ? ? ? 300 a forward voltage (diode) v dsf i dr = 100 a, v gs = 0 v ? ? ? 1.2 v reverse recovery time t rr ? 61 ? ns reverse recovery charge q rr i dr = 100 a, v gs = 0 v, di dr /dt = 50 a/ s ? 49 ? nc marking note 6: a line under a lot no. identifies the indication of product labels. [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales r epresentative for details as to environmental matters such as the rohs compatibility of product. the rohs is t he directive 2011/65/eu of the europe an parliament and of the council of 8 june 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. duty 1%, t w = 10 s 0 v 10 v v gs r l = 0.4 v dd 20 v i d = 50 a v out 4.7 k100f04k 3 lot no. note 6 part no. (or abbreviation code)
TK100F04K3 2013-11-01 3 moisture-proof packing the TK100F04K3 is packed in a moisture-proof laminated aluminum bag. precautions for transportation and storage (1) avoid excessive vibration during transportation. (2) do not toss or drop the packed devic es to avoid ripping of the bag. (3) after opening the moisture-proof bag, the devices should be assembled within two weeks in an environment of 5 c to 30 c and rh70% or below. perform reflow at most twice. (4) the moisture-proof bag may be stored unopened for up to 12 months at 5 c to 30 c and rh90% or below. (5) if, upon opening the bag, the moisture indicator card shows humidity of 30 % or above (the color of the 30% dot has changed from blue to pink) or the expiration date has passed, the devices should be baked as follows: baking conditions: 125 c for 48 hours. since the tape materials are not heat-proof, devices shou ld be placed on either heat-proof trays or aluminum magazines when baking. 30% the humidity indicator shows an approximate ambient humidity at 25 c. if the ambient humidity is below 30%, the co lor of all the indicator dots is blue. if, upon opening the bag, the color of the 30% dot has changed from blue to pink, the devices should be baked before assembly.
TK100F04K3 2013-11-01 4 v gs = 10 v 110 1000 1 100 10 10 1000 1 10 1000 tc = ? 55c 25 100 100 1 100 8 12 16 20 0 0.4 0.6 0.8 1 0.2 04 i d = 100 a 25 50 48 0 80 160 40 0 2 6 tc = ? 55c 100 25 120 200 0.8 1.2 1.6 2 0 80 160 200 40 00.4 v gs = 5.4 v 6.3 5.8 8 10 7 6.5 6 120 v gs = 5.2 v 5.4 5.6 5.8 7 8 10 0 20 40 60 80 100 0.4 0.6 0.8 1.0 0 0.2 6.5 6 common source tc = 25c pulse test i d ? v ds i d ? v ds i d ? v gs v ds ? v gs common source tc = 25c pulse test |y fs | ? i d r ds (on) ? i d drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v) forward transfer admittance ? y fs ? (s) common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = 10 v pulse test common source v ds = 10 v pulse test
TK100F04K3 2013-11-01 5 v dd = 32v v ds v gs 16 8 16 12 10 6 4 0 0 0 60 160 10 20 40 60 80 120 30 50 70 100 140 20 80 40 14 8 2 0 ? 80 0 40 80 120 160 ? 40 1 2 3 4 5 200 1000 100000 10000 1 0.1 100 10 c iss c oss c rss 100 0 ? 0.4 ? 0.8 1 1000 100 v gs = 0v 1 10 5 3 ? 1.2 10 0.1 i d = 25,50 a 0 6 2 3 ? 80 0 40 80 120 160 ? 40 4 1 100 a 5 200 v th ? tc r ds (on) ? tc i dr ? v ds p d ? tc common source tc = 25c pulse test common source v gs = 0 v f =1mhz tc = 25c common source v ds = 10 v i d = 1ma pulse test case temperature tc (c) gate threshold voltage v th (v) case temperature tc (c) total gate charge q g (nc) capacitance c (pf) capacitance ? v ds drain-source voltage v ds (v) drain-source on resistance r ds (on) (m ) case temperature tc (c) drain reverse current i dr (a) drain-source voltage v ds (v) drain power dissipation p d (w) drain-source voltage v ds (v) dynamic input / output characteristics gate-source voltage v gs (v) common source i d = 100 a tc = 25c pulse test common source v gs = 10 v pulse test 100 150 250 0 0 80 40 200 160 50 200 120
TK100F04K3 2013-11-01 6 100 s * 1 ms * 1000 0.1 10 0.1 1 100 100 10 v dss max 1 0.1 10 100 1m 10m 100m 1 10 0.1 1 10 duty=0.5 0.2 0.1 0.05 0.02 0.01 p dm duty = t/t r th (ch-c) = 0.83c/w t t 0.01 e as ? t ch channel temperature (initial) t ch (c) avalanche energy e as (mj) 0 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 25 v, l = 13 h ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as test circuit waveform r th ? t w pulse width tw (s) normalized transient thermal impedance r th (t) /r th (ch-c) single pulse single pulse tc=25 curves must be derated linearly with increase in temperature. i d max (pulse) * i d max (continuous) dc opeation tc = 25c safe operating area drain-source voltage v ds (v) drain current i d (a) e 160 120 80 40 0 25 50 100 125 175 200 200 75 150 l = 13uh v dd = 25v i ar = 100a
TK100F04K3 2013-11-01 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest ve rsions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applicat ion notes for product and the precautions and condi tions set forth in the "toshiba se miconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications , including but not limited to (a) determining t he appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? product is neither intended nor warranted fo r use in equipments or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage and/or serious public impact ( " unintended use " ). except for specific applications as expressly stated in this document, unintended use includes, without limitation, equipment used in nuclear fac ilities, equipment used in the aerospace industry, medical equipment, equipment used f or automobiles, trains, ships and other transportation, traffic si gnaling equipment, equipment used to control combustions or expl osions, safety devices, elevators and escalators, devices related to electric power, and eq uipment used in financ e-related fields. if you use product for unintended use, toshiba assumes no liability for product. for details, please contact your toshiba sales representative. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, us e, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear , chemical, or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the applicable export laws and regulations includ ing, without limitation, the japanese fo reign exchange and foreign trade law and t he u.s. export administration regulat ions. export and re-export of product or related software or technology are strictly prohibit ed except in compliance with all appl icable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclus ion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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